to-220-3l plastic-encapsulate diodes SBL1030CT, 35ct, 40ct, 45ct, 50ct, 60ct schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) value symbol parameter sbl 1030ct sbl 1035ct sbl 1040ct sbl 1045ct sbl 1050ct sbl 1060ct unit v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 30 35 40 45 50 60 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 42 v i o average rectified output current@ t c =95 10 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 175 a p d power dissipation 2 w r ja thermal resistance from junction to ambient 50 /w t j junction temperature 125 t stg storage temperature -55~+150 to-220-3l 1. anode 2. cathode 3. a node 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symbol device test conditions min typ max unit SBL1030CT 30 sbl1035ct 35 sbl1040ct 40 sbl1045ct 45 sbl1050ct 50 reverse voltage v (br) sbl1060ct i r =0.5ma 60 v SBL1030CT v r =30v sbl1035ct v r =35v sbl1040ct v r =40v sbl1045ct v r =45v sbl1050ct v r =50v reverse current i r sbl1060ct v r =60v 0.5 ma SBL1030CT-1045ct 0.55 forward voltage v f sbl1050ct,1060ct i f =5a 0.7 v typical total capacitance c tot SBL1030CT-1060ct v r =4v,f=1mhz 450 pf 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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